Abstract
The melt growth of bulk GaN crystals is hindered by high nitrogen pressure (∼45000 atm) at melting point. Recently, bulk GaN crystals were grown at a pressure of ∼100 atm by means of Na flux. However, the flux growth method failed to control the nucleation site and growth orientation of GaN. In this work, oriented GaN crystals were obtained by means of a seeded Na flux method with the addition of oriented AlN(0001) film to the growth ambient. The nucleation of bulk GaN was spatially confined to the top surface of the AlN film and grown with the GaN[0001] axis parallel to the AlN[0001] axis. In contrast, no bulk GaN was observed on the SiC(0001) surface which was also lattice matched with the GaN. Both X-ray diffraction (XRD) and cathodoluminescence confirm the high quality of the as-grown GaN.
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