Abstract
Heavily nitrogen (N)-doped polycrystalline diamond is reported to have excellent electron emission properties although its emission sites are limited. This report describes the fabrication processes, characterisation and electron emission properties of N-doped heteroepitaxial diamond which posses high potential as broad area emitter devices. We have obtained epitaxial diamond films on iridium (Ir) substrates by hot filament CVD using urea [(NH 2 ) 2 CO] as a dopant for N. The Ir substrates are bias treated via direct current plasma CVD (d.c. plasma CVD) method prior to the growth. Surface of the deposited films is smooth and continuous in scanning electron microscopy (SEM) observation. The epitaxial diamond growth is confirmed from reflective high energy electron diffraction (RHEED) pattern. It is found that the electron emission from heteroepitaxial diamond film is dominated by standard Fowler-Nordheim type emission due to the existence of strong electric field in the vacuum with the value of 26 V/μm.
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