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Abstract
Molecular beam epitaxy (MBE) grown wafers were used to fabricate GaAs distributed IMPATT (DIMPATT) diodes. All devices were of double‐drift, flat‐profile type and an additional AlxGa1−xAs layer was included in the structure to facilitate selective etching. The operation of DIMPATT diodes differ from the operation of conventional IMPATT’s since the electromagnetic waves are guided entirely within the device. Thus, the control of thickness and doping uniformity of the grown layers becomes extremely important. Additionally, the control of growth‐related defects is critical since DIMPATT’s are inherently very large area devices. Details of MBE growth and device results are discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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