Abstract
New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs) is achieved with good reproducibility.
Highlights
Organic thin film transistors (OTFTs) have been the focus of intensive research in the last three decades due to their potential applications in low cost and flexible electronics.[1,2] A variety of studies have been proposed to improve the performance of OTFTs, especially the carrier mobility, by optimizing growth conditions of organic semiconductor film and/or modifying surface properties of gate insulators
It has been shown that the charge mobility in OTFTs increases monotonically with the grain size as a result of decreased grain boundary density of organic thin film, because the grain boundary is known as an energy barrier in charge transport and limits the charge mobility.[6,7,8]
A molecular monolayer of PTCDI-C8 applied as buffer layer for the subsequent deposition of pentacene thin films was evaporated onto SiO2 dielectric surface under high vacuum (∼10-8 mbar) at high substrate temperature (140 ◦C)
Summary
Organic thin film transistors (OTFTs) have been the focus of intensive research in the last three decades due to their potential applications in low cost and flexible electronics.[1,2] A variety of studies have been proposed to improve the performance of OTFTs, especially the carrier mobility, by optimizing growth conditions of organic semiconductor film and/or modifying surface properties of gate insulators. It has been shown that the charge mobility in OTFTs increases monotonically with the grain size as a result of decreased grain boundary density of organic thin film, because the grain boundary is known as an energy barrier in charge transport and limits the charge mobility.[6,7,8] Recently, a record in high charge mobility of OTFTs was achieved by inkjet printing of single-crystal films with large size 2D stripe-like features.[9] Dropcast film could result in large crystalline domains give high charge mobility, e.g. in the case of derivatives pentacene,[10] but the average mobility is one order lower. This may hint the inhomogeneity of the film over large area
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