Abstract
A two-stage flash-evaporation epitaxy of InSb thin films on GaAs(100) substrates is developed. In the first, low temperature stage, a buffer layer of thickness of about 20 nm is deposited. In the second, high temperature stage the bulk of the film is deposited. Thus obtained InSb films have good structural and electrical properties, comparable with those obtained by MBE. They can be used for practical applications, e.g. for Hall sensors. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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