Abstract
InP layers were grown by chemical beam epitaxy (CBE) using high purity thermally precracked tertiarybutylphosphine (TBP) and trimethylindium (TMI) as the source of the group III element. For optimized substrate temperature and V/III ratio, InP films of good electrical and optical quality have been obtained; the n-type background carrier concentration is (1–2) × 10 15 cm -3, with a Hall mobility at 77 K being μ 77 = 45,000 cm 2 V -1 s -1. Given the low value of the V/III ratio, and according to mass spectrosc measurements, the phosphorus species giving rise to epitaxy is expected to be the dimer P 2. The TBP consumption in CBE is very low when compared to organometallic vapour phase epitaxy (OMVPE), typicaly below 0.25 g/μm of InP layer.
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