Abstract

This paper describes a systematic study on the growth of InP by metalorganic MBE (MOMBE) using trimethylindium (TMI) and phosphine (PH 3) as starting materials. InP layers with free electron concentrations as low as 2×10 14 cm -3 and 77 K Hall mobilities up to 132,000 cm 2/V·s were obtained. The excellent optical properties of the layers are demonstrated by photoluminescence spectra which are dominated by well resolved excitonic transitions. The donor bound exciton recombinations are detectable up to the 6th component and show linewidths of less than 0.08 meV.

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