Growth of InP high electron mobility transistor structures with Te doping

Abstract

InP high electron mobility transistor (HEMT) structures with In 0.53Ga 0.47As channels and In 0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50–100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000–10,000 cm 2/V-s and sheet densities of 1–4×10 12/cm 2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.