Abstract
Epitaxial layers of InP were grown by the infinite solution technique. The layers were characterized by Hall-effect measurements, SIMS, photoluminescence measurements, and Auger spectroscopy. Si and S were identified as major background donors. Si predominates at growth temperatures above about 700°C. The concentration was reduced by adding trace amounts of water vapor to the hydrogen ambient and by reducing the growth temperature. Silicon's predominance is consistent with the thermodynamic constraints of Weiner's model describing Si contamination controlled by the quartz-hydrogen reaction. However, the fast response of the solution to variations in the partial pressure of water vapor indicates the importance of a complementary reaction involving the direct conversion of Si in the solution to SiO 2. A study of the electrical, optical, and chemical properties of the material strongly suggests the amphoteric nature of Si in InP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
