Growth of InN whiskers from single source precursor

Abstract

The group-III nitrides GaN, InN, AlN and their alloys In x Ga 1-x N, Al x Ga 1-x N have recently acquired technological importance for LED and laser applications. However, InN has a low decomposition temperature and the growth of crystalline InN material at low temperatures is difficult. One of the approaches is to design single source precursors that decompose at low temperatures. Single source precursors of the type N 3 In[(CH 2 ) 3 NMe 2 ] 2 were developed and the growth of crystalline InN films with preferred orientation was achieved using this compound. However employing specific CVD process parameters we were able to grow InN whiskers consistently by CVD using a cold wall CVD reactor on sapphire substrates at 500°C. These whiskers were characterised by XRD, SEM, EDX and TEM measurements.