Facile modulation of single source precursors: the synthesis and characterization of single source precursors for deposition of ternary chalcopyrite materials

Abstract

In this paper, the syntheses and thermal modulation of ternary single source precursors, based on the [{ER 3} 2Cu(YR′) 2In(YR′) 2] architecture in good yields are described (E=P, As, Sb; Y=S, Se, and R=alkyl, aryl). Most importantly, we have successfully prepared the first liquid CuInS 2 (CIS) single source precursors, (when R=Bu, Y=S, and R′=Et, or Pr). These new compounds were utilized for spray chemical vapor deposition (CVD) of copper indium disulfide, an absorber layer for the fabrication of thin-film solar cells. Thermogravimetric analyses (TGA) and Differential Scanning Caloriometry (DSC) demonstrate that controlled manipulation of the steric and electronic properties of either the group five donor and/or chalcogenide moiety permits directed adjustment of the thermal stability and physical properties of the precursor. Preliminary studies show that these derivatives produce CuInS 2 thin-films at low temperature. X-Ray diffraction studies, EDS and SEM confirmed the formation of the single-phase CuInS 2 thin-films.