Abstract
Epitaxial growth of InN at high temperature was tried on a GaN buffer/(0001)sapphire substrate by halide vapor phase epitaxy using InCl3 and NH3 sources. An InN epitaxial layer was obtained reproducibly at a growth temperature as high as 750° C. The growth rate of hexagonal InN was 0.2 µ m/h at 750° C. The X-ray full width at half-maximum (FWHM) value of the obtained InN showed a minimum (24.7 min) at the growth temperature of 700° C. It was found that a high input partial pressure of InCl3 was necessary for the growth of InN at high temperature.
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