Abstract
InGaZnO nanowires were grown from amorphous InGaZnO thin films using Mo/Au-catalyzed Vapor-Liquid-Solid (VLS) growth process. The Mo/Au/amorphous InGaZnO stacked sample was annealed at 700 °C in N2 atmosphere. The growth of InGaZnO nanowires was confirmed on the edge of the Mo thin film closest to the Mo/Au overlap. The Au or Mo-covered areas, on the other hand, were not found to be sites of nanowire growth. Nanowires have Mo contained Au nanoparticles at the tip, which suggests the VLS growth mechanism. TEM results also verified that the nanowires are single crystalline, and that their growth direction is along the c-axis.
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