Abstract
The growth conditions to achieve high-quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular-beam epitaxy are described. The present results indicate that optical pyrometry is a reliable method to determine the growth temperature, and a stable substrate temperature is of critical importance in achieving homogeneous InAsSb composition throughout the growth period. The quality of these epilayers is evaluated by double x-ray diffraction measurement, reflection high-energy electron diffraction study, Nomarsky microscopy, and low-temperature photoluminescence. The optical quality is further demonstrated by the optically pumped coherent emission at ∼3.9 μm observed from an InAsSb active layer.
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