Abstract
Photovoltaic (PV) technology has the potential to fulfill the world’s energy demand by replacing non-renewable fossils fuels for useful energy production. CuInSe 2 /Cu(In,Ga)Se 2 (CISe/CIGSe) thin film solar cell can dominate the PV market if the energy production cost is low, which is possible using inexpensive deposition methods or/and precursor materials. In this research work, we have studied In 2 Se 3 thin films prepared by low-cost pneumatic spray pyrolysis (PSP), grown at three different substrate temperatures. The formation of a stable γ-In 2 Se 3 phase was revealed by structural (X-ray diffraction and Raman spectroscopy), compositional, and optical studies. The crystallinity of In 2 Se 3 thin films increases with an increase in substrate temperature. From scanning electron microscopy (SEM), In 2 Se 3 thin films showed the surface morphology of uniform and dense particles with columnar structure. The lower values of average roughness ( 2 Se 3 thin films were suggesting the formation of a smooth and uniform surface. This deposited In 2 Se 3 by PSP can be utilized as a precursor layer for CISe/CIGSe synthesis as well as a buffer layer in thin film solar cells.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call