Abstract
γ-In2Se3 thin films were grown by the electrostatic spray pyrolysis deposition growth technique. We investigated the dependence of the crystalline quality and optical properties of the grown films on the growth conditions, such as growth temperatures and the molar ratios of source material Se/In in the precursor solution. The films which were highly aligned to the c-axis were grown at low growth temperature of 250 °C on glass substrates. The optical band gap energy was about 1.94 eV and was independent of the growth temperatures and the molar ratios Se/In in the precursor solution.
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