Abstract
Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
