Growth of highly (1 0 0)-oriented Zr-rich PZT thin films on Pt/Ti/SiO 2/Si substrates by a simple sol–gel process

Abstract

Zr-rich lead zirconate titanate thin films with highly preferential (1 0 0) orientation, PZT80/20 and PZT85/15, and randomly oriented PZT70/30 thin films have been successfully prepared on (1 1 1)Pt-coated Si substrates using the sol–gel process with rapid thermal annealing (RTA) at 700°C for 200 s. The results of X-ray diffraction, including rocking curve measurements, suggest that PZT80/20 and PZT85/15 have a single (1 0 0) orientation with the rocking curve FWHM of around 0.5°. The dielectric properties of each film have been measured as well. The results show that highly (1 0 0)-oriented PZT85/15 films exhibit higher remnant polarization (2 P r=41.4 μC/cm 2) and higher coercive field (2 E c=111 kV/cm) than randomly oriented PZT70/30 films (2 P r=33.4 μC/cm 2 and 2 E c=106 kV/cm, respectively).