Abstract
We report the growth and characterization of single-crystalline, epitaxial Zn0.9Mg0.1O films on c-plane sapphire substrates with MgO buffer layer by plasma-assisted molecular beam epitaxy. The quality of the Zn0.9Mg0.1O epilayers is evidenced by a Hall mobility of more than 60cm2V−1s−1 at room temperature and an X-ray diffraction (XRD) rocking curve full-width at half-maximum of 47arcsec for the (0002) reflection. A screw dislocation density of 4×106cm−2 is estimated by XRD. Transmission electron microscopy revealed that the thickness of the MgO buffer layer is about 3.5nm, and a highly c-axis oriented Zn0.9Mg0.1O (0002) reflection corresponding to the wurtzite-phase is observed. Alloying with Mg is found to widen the bandgap energy of the ZnO, and luminescence is observed at 3.502eV at low temperature.
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