Abstract

Single crystals of magnesium oxide of very high purity and perfection, 21 × 1.5 mm were grown epitaxially by chemical vapor transport in HCl, at growth rates as high as 100 μm/hour. Dislocation densities of 2 × 106 d/cm2 were found in crystals grown on magnesium oxide substrates having much higher dislocation densities. Growth of single crystal magnesium oxide was also achieved by chemical vapor transport in H2.

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