Abstract
High-purity InP layers have been grown by chemical beam epitaxy using H2 as the carrier gas for transporting the metal alkyl-trimethyl indium into the growth chamber. InP layers with μ≳1.0×105 cm2/V s and n<4.0×1014 cm−3 were grown at substrate temperatures as low as 500 °C and using a low V/III ratio (2.2) and PH3 cracking cell temperature of 900 °C. The 4 K photoluminescence spectra were dominated by donor bound excitonic transitions (D0, X)n up to n=5 and the free-excitonic (X) transitions for InP layers grown above 500 °C.
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