Growth of high purity InGaAs using different indium sources

Abstract

A correlation between the purity of liquid phase epitaxial InGaAs layers and the In source is made. Special precautions were taken to ensure a clean and leak-tight system for reproducibly achieving high purity InGaAs layers. Transmission electron microscopy results show that the InGaAs/InP interface is detect free and the layer is lattice matched. The highest purity results, which were obtained by selecting the In batch containing the lowest Si content, are μ 300 = 11,500±400 cm 2 V·s , n 300 = (3.8±1.9)× 10 14 cm -3, μ 77 = 55,200±3,800 cm 2 V·s , n 77 = (3.4±1.8)×10 14 cm -3.