Abstract
Unintentionally doped liquid phase epitaxial GaAs layers have been grown from different Ga solutions baked for times between 6 and 48 h. From photoluminescence measurements C and Si have been identified as the main residual impurities. Hall-effect measurements show a reduction of the overall impurity concentration and an increase of the compensation ratio with the baking time. The combination of photoluminescence and Hall-effect results suggests a decrease of the contamination by carbon and probably by silicon of the grown layers as the duration of the heat treatment increases.
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