Abstract
The method of growing of ZnS and ZnSe single crystals doped with chromium and iron using a combination of the solid phase recrystallization and diffusion doping during the high-temperature gas-static pressing has been implemented. The isostatic pressing up to 110MPa has made it possible to increase the process temperature up to 1300°C, increase the rate of grain growth and diffusion of Fe2+ and Cr2+ ions in zinc chalcogenides crystalline samples, reduce processing time to 25–150h. ZnS:Cr (Fe) and ZnSe:Cr (Fe) single crystals from several to tens mm in size with dopant concentrations of (1–5)×1019cm−3 for Cr2+ and (5–20)×1018cm−3 for Fe2+ and at the total impurity's content no more than 5×10−4wt% have been obtained. The lasers made from the crystals demonstrated 55% differential lasing efficiency for the absorbed power.
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