Abstract
The solid phase recrystallization (SPR) technique under a barothermal high-temperature gas-static pressing (HIP) treatment was implemented to the growth for ZnS and ZnSe single crystals. The application of 200MPa isostatic pressure allowed increasing the process temperature up to 1150–1300°C, which in turn has increased the rate of grain growth and reduced process duration to 8–52h. The impurity contents in ZnS and ZnSe single crystals did not exceed 10−4wt%. The obtained crystals demonstrated transmittance in the wide VIS-IR spectral range close to the theoretical, ranging in size from a few to tens mm, which allows their use in practical applications as a laser matrix.
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