Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts.

Yue Hu,Jingjing Lin,Qingwen Li,Qiuchen Zhao,Lixing Kang,Lianmao Peng,Jin Zhang,Hua Zhong,Zhiyong Zhang,Zhongfan Liu,Shuchen Zhang,Liangwei Yang,Zequn Wang

doi:10.1038/ncomms7099

Abstract

Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs μm(-1). Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of -467.09 μA μm(-1) and an on-conductance of 233.55 μS μm(-1). Radio frequency transistors fabricated on these samples exhibit high intrinsic fT and fMAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

Highlights

Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future
The average nanotube density is measured to be at least 130 tubes mm À 1 based on the number of the black lines, which were taken as SWNTs in the scanning electron microscope (SEM) image[22]
Higher-magnification SEM and atomic force microscope (AFM) images further clearly indicate the density of the as-grown horizontally aligned SWNT arrays is as high as 130 SWNTs mm À 1

Summary

Introduction

Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future These applications require high-density horizontally aligned SWNT arrays. For the in situ growth methods, especially in chemical vapour deposition (CVD) systems, multiple loading catalyst[8], multiple-cycle growth[9], CuCl2/polyvinylpyrrolidone alcohol solution growth[4] and periodic growth[10] have been developed and the density can reach 10–50 SWNTs mm À 1 These SWNT arrays show good qualities and perfect alignment, but densities are still not high enough for SWNT-based IC applications[3,11]. We named these catalysts as Trojan catalysts by analogy with soldiers emerging from the Trojan horse in the Greek story

Methods

Results

Conclusion