Growth of hexagonal GaN films on the nitridated β‐Ga2O3 substrates using RF‐MBE

Abstract

AbstractThe growth of hexagonal GaN (h‐GaN) films on the nitridated β‐Ga2O3 substrates using radio‐frequency. molecular beam epitaxy (RF‐MBE) was investigated. The β‐Ga2O3 single crystal prepared by optical floating zone method was used to a substrate for GaN film growth, and nitridated by exposing to electron cyclotron resonance nitrogen plasma. It was found that h‐GaN layer is formed on the surface of β‐Ga2O3 substrates by controlling the nitridation condition, and homo‐epitaxial growth of h‐GaN films was succesfully achieved by optimizing the RF‐MBE growth condition. The observation of cross‐sectional high‐resolution transmission electron microscopy indicated that obtained GaN films grown on these nitridated β‐Ga2O3 substrates were of a high structural quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)