Growth of GaSb whiskers by thermal decomposition of a single source precursor

Abstract

Thermal decomposition reactions of the Lewis acid–base adducts t-Bu3Ga–Sb(t-Bu)31 and t-Bu3Ga–Sb(i-Pr)32 were investigated at different temperatures. Both adducts lead to the formation of crystalline GaSb particles in the temperature range of 275–450 °C, proving their potential to serve as single source precursors for the preparation of GaSb. In contrast to 1, 2 tends to form crystalline, highly-oriented GaSb whiskers under the pyrolysis conditions. Detailed temperature-dependent studies clearly reveal the strong influence of the decomposition conditions on the whisker growth. While at temperatures between 275 and 375 °C single GaSb needles preferably were formed, higher temperatures (400–450 °C) lead to the formation of crystalline GaSb dendrites. As-prepared carbon-free, cubic GaSb whiskers were characterized in detail by SEM, TEM, electron diffraction, EDX and EEL spectroscopy.