Abstract
Factors which affect the very narrow range of optimum IIIV ratios for hetero-epitaxial GaSb on GaAs have been investigated. The GaSb was grown from trimethylgallium (TMGa) and trimethylantimony (TMSb) in a horizontal MOVPE reactor. The growth rate, pressure, temperature, inlet geometry of the cell and/or liner, IIIV ratio and total gas flow rate were investigated with regard to their effect on electrical properties. It was found firstly, that the optimum IIIV ratio varies with reactor pressure. Secondly, the growth rate of GaSb depends on the TMGa concentration, reactor pressure and total flow rate, but not on the TMSb concentration. Finally it was found that the best electrical quality GaSb was obtained with growth rates below 2.5 μm/h irrespective of pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
