Growth of GaN Thin Films on Silicon Using Single Source Precursors and Development of New Patterning Technology by Combination of MOCVD and Micro‐Contact Printing Methods

Abstract

We have grown the GaN thin films on silicon substrates using the newly developed single source precursors by thermal MOCVD method. Highly oriented GaN thin films in the [002] direction with hexagonal structure were deposited on Si(111) substrates at 800 °C and 1 Torr with Triazido(triphenylphosphine oxide) gallium. XRD pattern and pole-figure analysis proved that the highly oriented GaN film has a single-crystalline nature. PL data of this film show that a strong emission peak but with some large FWHM of 100 meV could be observed at 3.4 eV (365 nm). Patterning of GaN thin films was also successfully performed by MOCVD onto Si(100) substrates of which surface was modified by organic thin film. The organic thin film of SAMs was in first obtained by μCP method. The deposition of GaN thin films has then been carried out onto those modified Si(100) substrates using the single molecular precursor by thermal MOCVD without carrier and bubbler gases. In addition, a buffer layer of thin TiO2 film was applied into the modified Si(100) substrates to understand a possibility of selective deposition of GaN film.