Abstract
GaN and InGaN epilayers were successfully grown on the sapphire (0001) by hot wall beam epitaxy (HWBE) using Ga and In metals and NH3 gas. For the PL spectra of GaN epilayers, strong band edge (BE) emissions without deep level emissions were obtained. The In mole fraction of InGaN epilayers which were grown for the first time by HWBE was able to be controlled in the range less than 12% by changing only the substrate temperature (Tsub). Moreover, the growth interruption method was found to be effective for improving the crystalline quality of InGaN epilayers.
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