Abstract
GaN and InGaN epilayers were successfully obtained on nitrided Ga buffer layers predeposited on the sapphire (0001) substrate by Hot Wall Beam Epitaxy (HWBE) using Ga and/or In metals, NH 3 gas or RF plasma nitrogen source. For both films, the surface morphology was smooth and the PL spectra showed strong near-band-edge emission without deep level emission. For the InGaN films, the highest In mole fraction of 24% was obtained with the substrate temperature ( T sub) of 575 and the RF power of 500 W, which was estimated from the shift of X-ray diffraction peak.
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