Abstract
( GaAs) 1* minus; x ( Si 2) x for 0< x<0.25 has been successfully grown on GaAs (100) substrates using migration-enhanced epitaxy. Structural and compositional analysis of the as-grown ( GaAs) 1− x ( Si 2) x layers indicated single phase epitaxial crystals with zincblende structure in the compositional range 0< x<0.25. The lattice constant a 0 of the alloys was found to decrease with increasing Si content from 0.56543 nm at x=0 to 0.5601 nm at x=0.25. Double-crystal X-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies carried out on a 10 period ( GaAs) 1− x ( Si 2) x / GaAs strained layer superlattice indicated sharp and abrupt interfaces of high crystalline quality.
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