Abstract
GaInAs/InP wafers with a thick active layer (0.5-2.0 µm) were grown by chemical beam epitaxy (CBE). Stripe-contact lasers were fabricated to evaluate these wafers. The lowest normalized threshold current density obtained was 7.9 kA/cm2·µm for devices with a 2.0 µm thick active layer. This value is almost acceptable for application to surface emitting lasers.
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