Abstract
Indium surface segregation during the growth of Ga1−xInxAs by chemical beam epitaxy is evidenced in real time by reflection high-energy electron diffraction. An efficient way to suppress the compositional broadening of GaAs on the GaInAs interface resulting from the In segregation effect is proposed. It consists in using the chemical reaction of AsCl3 molecules at the surface, which is shown to etch layer by layer the Ga1−xInxAs alloy. Monolayer etching precision is thus obtained and used to eliminate the In accumulation at the GaInAs surface and the related interface broadening.
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