Abstract
Experimental data are presented that demonstrate the possibility of producing GaInAsP quantum dots on GaAs by ion beam deposition. The morphology of the quantum dots and the effect of GaAs substrate temperature on parameters of GaInAsP quantum dot arrays have been studied by atomic force microscopy and scanning electron microscopy. We have determined the elemental composition of the quantum dots and obtained photoluminescence spectra of the GaInAsP/GaAs heterostructures.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call