Abstract
Gallium oxide (Ga2O3) nanowires were grown on fused quartz and Si substrates by a vapor transport method of heating gallium metal at 750−1100 °C in a tube of the horizontal furnace. The obtained white colored product has shown to be the Ga2O3 nanowires with average diameters ranging from 30 to 80 nm. The optical transmittance spectra indicated that the bandgap energy of Ga2O3 nanowire increases as the diameter of nanowire decreases.
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