Abstract
In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga2O3 nanowires. We show the results of morphological, structural, electrical and optical characterization of the β-Ga2O3 nanowires including the optical bandgap and photoconductance. The influence of density on these Ga2O3 nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.
Highlights
Technology involving the development of ultra-wide bandgap semiconductors such as β-Ga2O3 has received considerable attention, its unique combination of chemical stability and wide band gap facilitates diverse UV applications in nanoscale electronics and o ptoelectronics[1] such as solar UV monitoring, astronomy, communications, and detection of missiles
The morphology of the nanowires grown on bare quartz was different from that of the nanowires coated with 5 nm Ag
Scanning electron microscopy (SEM) images (Fig. 2) showed that the density and size of the nanowires were much larger on Ag-coated samples after growth
Summary
Technology involving the development of ultra-wide bandgap semiconductors such as β-Ga2O3 has received considerable attention, its unique combination of chemical stability and wide band gap facilitates diverse UV applications in nanoscale electronics and o ptoelectronics[1] such as solar UV monitoring, astronomy, communications, and detection of missiles. Many studies have been proposed to fabricate UV photodetectors with specialized features to both survive in harsh environments and detect the UV region of the spectrum while remaining blind to visible wavelengths. Β-Ga2O3 is an ideal candidate for visible-blind UV-light sensors, for power electronics, solar-blind UV detectors, and device applications in harsh e nvironments[2,3]. Nanowires can minimize the side effects of lattice and thermal mismatch during the growth process, which simplifies the production of high performance d evices[4]. Nanowire photodetectors offer the possibility to isolate optical absorption and carrier transport paths[7,8]. The high sensitivity, simple and inexpensive fabrication process demonstrated by our β-Ga2O3 nanowire UV photodetector makes it promising for use in deep-ultraviolet detection applications. We demonstrate the structure and morphology of the nanowires in addition to performing optical and electrical characterization of the nanowire’s sensing properties
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