Abstract
In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.
Highlights
In recent years, gallium oxide (Ga2O3) has become one of the most significant materials that can operate in harsh conditions such as automobiles engines, flame monitoring, space communications, and detection of missiles
The thermal oxidation process was performed to explore the effect of silver thin film as a catalyst to enhance the growth of Ga2O3
We propose a simple and inexpensive thermal oxidation process to produce Ga2O3 thin film and nanowires using 5 nm and 300 nm Ag thin film as a catalyst patterned on a quartz substrate
Summary
Gallium oxide (Ga2O3) has become one of the most significant materials that can operate in harsh conditions such as automobiles engines, flame monitoring, space communications, and detection of missiles. The thermal oxidation process was performed to explore the effect of silver thin film as a catalyst to enhance the growth of Ga2O3 This process is one of the less expensive techniques that operate at a high temperature. Because the influence of the oxidation parameters (i.e., annealing temperature, time, and oxygen concentration) and Ag film thickness on Ga2O3 growth had not been comprehensively investigated, various parameters of Ga2O3 growth due to silver presence were examined in this work Different characterization techniques, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and electrical measurements have been performed in this study to explore the growth mechanism of thin film and nanowire of Ga2O3
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