Growth of Epitaxial Gan Films Using Zno Buffer Layer by Pulsed Laser Deposition

Abstract

AbstractGaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700 °C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800 °C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.