Growth of diamond films on Ti–6Al–4V substrates and determination of residual stresses using Raman spectroscopy

Abstract

Diamond films were deposited on Ti–6Al–4V substrates using the hot filament chemical vapor deposition method. Improvement in film adhesion was achieved by controlling the methane ratio and surface treatment of the substrate. The quality of film adhesion was established by measuring the residual compressive stress in between the film and substrate. A general model is used for examining the micro-Raman spectrum in order to measure the residual biaxial stress. The as-grown films have shown residual compressive stress from 1.782 to 7.25 GPa, coming very close to the theoretically predicted value.