Abstract
CuInS2 thin films were epitaxially grown on Si(001) wafers at 500°C using multisource evaporation method. The Cu source temperature was varied keeping the In and S source temperatures constant. The obtained films belonged to the Cu2S–In2S3 system with little extra phase over the range of 0.9≤[Cu]/[In]≤2.9. X-ray diffraction and reflection high energy electron diffraction measurements showed that the films were composed of Cu–Au, sphalerite and chalcopyrite structures, although the last was not always observed. The characteristic structures in the photoluminescence spectrum of a film with [Cu]/[In]=1.4 measured at 23 K was interpreted as the weak broad exciton emission and the donor-acceptor pair emission with a phonon replica comparing to the bulk crystals. The position and the broadening of the exciton emission are reasonable considering the coexistence of various crystal structures.
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