Growth of Cubic SiC Films Using 1,3-Disilabutane

Abstract

Cubic Sic films have been grown on the Si(100) and Si(ll1) substrates in the temperature range 650-900 C by low-pressure organometallic chemical vapor deposition (LP-OMCVD) using 1,3-disilabutane, H3SiCH2SiH2CH3, as a single molecular precursor. Polycrystalline cubic Sic films were formed on Si(100) substrates a t such a low temperature as 650 C. The films obtained on carbonized Si(100) substrates a t temperatures higher than 850 C show improved crystallinity in their X-ray diffraction patterns. On the other hand, highly oriented Sic films in the [ill] direction were formed on carbonized Si(ll1) substrates a t 900 C. The growth temperatures in this study are much lower than those previously reported, and this is the first report of cubic Sic films grown using 1,3-disilabutane.