Deposition of cubic SiC films on silicon using dimethylisopropylsilane

Abstract

We have grown cubic SiC films on the Si(100) and Si(111) substrates in the temperature range of 750–970 °C by low pressure organometallic chemical vapor deposition (LP-OMCVD) using dimethylisopropylsilane (CH3)2CHSiH(CH3)2 as a single molecular precursor. On a carbonized Si(100) substrate, a polycrystalline cubic SiC film was obtained at 960 °C. Cubic-type SiC films were also grown on uncarbonized Si(100) surfaces at 850 °C. At lower temperatures, amorphous SiC films were formed. These growth temperatures are much lower than those reported previously by others. On an uncarbonized Si(111) substrate, however, strongly oriented growth of cubic SiC film in the [111] direction was observed at the growth temperature of 970 °C.