Abstract
Growth of crystalline grains has been studied using atomic hydrogen plasma exposure on thick$(\ensuremath{\sim}190\phantom{\rule{0.3em}{0ex}}\mathrm{nm})$ microcrystalline silicon films $(\ensuremath{\mu}\mathrm{c}\text{\ensuremath{-}}\mathrm{Si}:\mathrm{H})$ with a low crystalline volume fraction $(\ensuremath{\sim}7%)$. Raman spectra reveal that the intensity near $520\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ increases after hydrogen exposure. Cross-sectional transmission electron micrographs of $\ensuremath{\mu}\mathrm{c}\text{\ensuremath{-}}\mathrm{Si}:\mathrm{H}$ films exposed to atomic hydrogen show the growth of crystalline grains extending from surface to bulk, approximately $100\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$. These results suggest that crystal formation in $\ensuremath{\mu}\mathrm{c}\text{\ensuremath{-}}\mathrm{Si}:\mathrm{H}$ films is likely to be caused by chemical annealing.
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