Abstract
Epitaxial layers of (111) Cd1−xMnxTe (x=0.05) were grown on (111) GaAs substrates by pulsed laser evaporation and epitaxy. A XeCl excimer laser beam was directed at a Cd0.95Mn0.05Te target to produce the vapors necessary for deposition. A simultaneously operating pulse Nd:YAG laser was used to create the overpressure of Cd needed in the growth of stoichiometric films. In situ reflection high-energy electron diffraction, as well as scanning electron microscopy, energy-dispersive x-ray analysis, and photoluminescence study showed that the films had characteristics comparable to the best CdMnTe epilayers grown so far by molecular beam epitaxy or metalorganic chemical vapor deposition.
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