Growth of Cd1-xMnxTe crystals by vertical Bridgman method and analysis of composition dependence on the bandgap

Abstract

This article reports the growth of cadmium manganese telluride (Cd1-xMnxTe, CMT) single crystal by vertical Bridgman method and the property measurements for three different Mn compositions (x = 0.05, 0.10 & 0.15). The single crystalline nature of the grown crystals was confirmed with Laue back reflection method. The lattice constants were calculated using single-crystal X-ray diffraction analysis. Phase formation and zinc blende crystal structure were confirmed with powder X-ray diffraction analysis. The shifting of the diffraction peak position indicates the reduction in lattice parameter of Cd1-xMnxTe crystals with Mn concentration. Raman spectra exhibited two mode behavior having CdTe and MnTe-like structures and their longitudinal optical phonon modes displaying peak shift with Mn concentration. The increase in the Mn concentration in CMT lattice made a blueshift in photoluminescence emission band leading to changes in the bandgap from 1.5776 to 1.7250 eV. The experimentally observed IR transmittance was found to be in line with theoretically observed transmittance. The observed Mn concentration dependent structural and optical properties confirm the formation of high quality CMT single crystals by vertical Bridgman technique.