Abstract
Highly c-axis-oriented LiNbO3(006) thin films were successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD). The as-deposited films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to analyze their crystalline structure and surface morphology. The results show that the highly c-axis-oriented LiNbO3 thin films of 2.5 µm thickness were successfully grown on SiO2/Si substrates with a ZnO buffer layer by PLD. The full width at half maximum intensity of the LiNbO3(006) peak of the sample fabricated under the optimum deposition conditions is only 0.18°. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with line width of 4 µm is 188 MHz, and the phase velocity is 3010 m/s, which is slightly lower than that of the 36° Y–X LiNbO3 substrate.
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