Growth of carbon-doped base GaAs/AlGaAs HBT by gas-source MBE using TEG, TEA, TMG, AsH 3, and Si 2H 6

Abstract

High-performance carbon-doped-base GaAs/AlGaAs heterobipolar transistors (HBTs) were grown by gas-source MBE using only gaseous sources including dopant sources. The AlGaAs emitter layer was doped with Si from uncracked SI 2H 6 ( n = 9 × 10 17 cm -3), and the base layer (92.5 nm) was doped with carbon from TMG ( p = 4 × 10 19 cm -3). From SIMS analysis it was confirmed that a well-defined emitter-base junction with sharp carbon profile was obtained. The base-current ideality factor from the Gummel plot was 1.47, and the emitter-base junction ideality factor was 1.12. A high DC current gain of 53 was obtained at a current density of 4 × 10 4 A/cm 2. The device characteristics of our carbon-doped HBTs were found to be stable under current stress.