Abstract
Cubic gallium nitride (GaN) films were grown on nitrided layers of GaAs(100) by hot-wire chemical vapor deposition. The nitrided layer was also formed by NH x radicals generated on a tungsten hot-wire surface. Nitridation conditions for the growth of GaN with a cubic-type structure were investigated. As a result, GaN film with a preponderant cubic phase was grown on the GaAs surface layer nitrided at a substrate temperature of 550 °C, a filament temperature of 1200 °C and an ammonia (NH 3) pressure of 1 Torr.
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